| PART |
Description |
Maker |
| 2SB1237 2SA1515S 2SA1515S10 |
Medium Power Transistor (-32V,-1A)
|
Rohm
|
| 2SD1781K08 |
Medium Power Transistor (32V, 0.8A)
|
Rohm
|
| L2SD1781KRLT1G L2SD1781KLT1 L2SD1781KQLT1 L2SD1781 |
Medium Power Transistor(32V, 0.8A) 中等功率晶体管（32V的，0.8A
|
Leshan Radio Company, Ltd.
LRC[Leshan Radio Company]
|
| 2SB118809 2SB1188 2SB1188T100Q |
Medium power transistor (-32V, -2A)
Medium power transistor (32V, 2A)
Medium power transistor (?2V, ?A)
|
Rohm
Littelfuse
|
| L2SD1781KQLT3G L2SD1781KQLT1G L2SD1781KQLT1G11 L2S |
Medium Power Transistor (32V, 0.8A) High current capacity in compact
|
Leshan Radio Company
|
| OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1.4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 15A I(C) | TO-41
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-41 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 8A条一（c）|1
|
Vicor, Corp.
Marktech Optoelectronics
|
| 2SB1132 2SB1132L-X-TN3-T 2SB1132L-P-AB3-R 2SB1132L |
MEDIUM POWER TRANSISTOR 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252
MEDIUM POWER TRANSISTOR 中功率晶体管
|
??『绉???′唤??????
UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| T1G4004532-FLEVB1 T1G4004532-FL-15 |
45W, 32V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| 2SD882S-X-AA3-R 2SD882S-X-AB3-R 2SD882S-X-T92-B 2S |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MEDIUM POWER LOW VOLTAGE TRANSISTOR 中功率低电压晶体
|
??『绉???′唤??????
UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| CSA968A CSA968 CSA968B CSA968BO CSA968BY CSA968AY |
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238AO
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238AY
25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238BY
25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238BO
25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238B
25.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238
PNP PLASTIC POWER TRANSISTORS
Single-Phase Filter; Filter Type:RFI; Current Rating:16A; Voltage Rating:250V; Capacitance:1uF; Inductance:0.6uH; Mounting Type:Flange; Series:FN2060; Terminal Type:Quick Connect RoHS Compliant: Yes
|
Continental Device India Limited
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
